PART |
Description |
Maker |
IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
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International Rectifier, Corp. IRF[International Rectifier]
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IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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IRF[International Rectifier]
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IRGPC20F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
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IRF[International Rectifier]
|
IRGP420U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
|
IRF[International Rectifier]
|
IRGBF20F IRGBF20 |
INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A)
|
IRF[International Rectifier]
|
IRGBC40S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=31A)
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IRF[International Rectifier]
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IRGBC40M-S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
EN7643 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat) NPN Single MCPH6
|
ON Semiconductor
|
IRGBC30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
IRGPC40 IRGPC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
15C02CH 15C02CH-TL-E EN7353B |
Bipolar Transistor 15V, 1A, Low VCE(sat) NPN Single CPH3
|
ON Semiconductor
|
EN0676 |
Bipolar Transistor, 15V, 0.7A, Low VCE(sat), NPN Single SPA
|
ON Semiconductor
|